MULTILAYER COATING EQUIPMENT
Comelec C30H PECVD
The Comelec C30H PECVD is specifically designed to apply Parylene and silicon dioxide (SiO2) layered coatings to two-dimensional components.
Product Information
The Comelec C30H PECVD is a plasma-enhanced chemical vapor deposition system that precisely applies multilayered coatings of Parylene and silicon dioxide (SiO2) to two-dimensional components. Using plasma rather than heat to activate the precursors needed to apply film layers allows for a broader range of substrates, including those with low melting points. The system’s fully modular and independent design enables greater customization and control of the final product.
The Comelec C30H PECVD is ideal for multiple settings, including lab testing, research and industrial production. It is equipped with a remote plasma source and an in-situ RF capacitive plasma source as well as a gas panel with six gas lines and three precursor lines.
System Features
- Thermalized chamber with double-wall technology
- Patented low-contamination door
- Fully automated process with user-configurable operation parameters
- Remote plasma source
- In situ RF capacitive plasma source
- Gas panel with six gas lines
- Three precursors lines
- Remote access interface using a standard browser
- Simplified maintenance design with improved access to key areas
Optional Features
- Clean room installation
- Bar code placement for traceability
- Advanced interface and web user experience
- Integrated pulley for tooling placement and removal
- Additional heated precursor lines
Specifications
Comelec C30H PECVD
Overall dimension (L x W x H)
88.5 x 46 x 57 in / 225 x 116 x 145 cm
Weight
771.6 lb / 350 kg
Chamber size
11.6 x 14.5 in / 29.5 x 37 cm
Tooling size
10.2 x 12.6 in / 26 x 32 cm
Max tooling load
220 lb / 100 kg
Dimer capacity
0.33 lb / 150 g
Power
3 x 400 V + N + PE – 50 Hz, 3 x 25A – 15kW
Thermalized chamber power
3 x 400V + PE – 50Hz
3x 14A – 9kW
3x 14A – 9kW
Thermalized chamber temperature range
20°C - 80°C
Remote plasma source
Frequency: 1.7 – 3MHz, Power: 3000W
In situ RF capacitive plasma source
Frequency: 13.56 MHz, Power: 300 – 1000W
Process temperature
Parylene: room temperature, PECVD: 20°C - 80°C
